Method of forming a device isolation trench in an integrated circuit device
AssigneeSamsung Electronics Co., Ltd.
InventorsDo-Hyung Kim, Sung-Bong Kim, Jung-In Hong
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Abstract
A method of forming a trench isolation in a semiconductor substrate is described, which comprises the steps of forming a trench on the substrate, forming a diffusion barrier insulating layer, forming a thermal oxide layer both sidewall and bottom of the trench contacted with the diffusion barrier insulating layer, forming a nitride liner, and forming trench isolation material to fill the trench. A multi-structure of the barrier layer and the thermal oxide layer is provided between the nitride liner and the trench, resulting in minimization of transistor characteristic deterioration. A thin thermal oxide layer is formed to achieve improved trench etching profile.
Claims9
A method of forming an isolation trench including a nitride liner in a semiconductor substrate, comprising:
- a first step of etching the substrate to form a trench;
- a second step of forming a conformal material layer on both sidewall and bottom of the trench;
- a third step of growing a thin thermal oxide layer between the conformal material layer and the substrate defining the trench through a thermal oxide process for preventing etch damage while etching the substrate;
- a fourth step of forming the nitride liner on the material layer;
- and
- a fifth step of using trench isolation material to fill the trench.
A method of forming an isolation trench including a nitride liner in a semiconductor substrate, comprising:
- etching the substrate to form a trench;
- forming an impurity material diffusion barrier layer on both sidewalls and a bottom of the trench, the barrier layer preventing impurity material penetration caused by formation of the nitride liner;
- forming the nitride liner on the barrier layer;
- and
- using trench isolation material on the nitride liner to fill the trench.
Dependencies are inferred from the claim text.