Combined resist strip and barrier etch process for dual damascene structures
AssigneeLam Research Corporation
InventorsRao Annapragada, Reza Sadjadi
Life of this patent
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Abstract
A method of etching a stack is provided. Generally, a trench patterned resist layer is placed over a dielectric layer of the stack. A trench is partially etched into the dielectric layer. A simultaneous stripping of the trench patterned resist layer, etching the barrier layer, and etching the trench is then performed. As a result an etch stack may be provided with less damage. The method may be used to provide a dual damascene structure. The dual damascene structure may be provided by etching a via before placing the trench patterned resist layer over the dielectric layer of the stack.
Claims18
A method of etching a stack, wherein the stack comprises a barrier layer and a dielectric layer over the barrier layer, comprising:
- placing a trench patterned resist layer over the dielectric layer;
- partially etching a trench in the dielectric layer;
- and
- simultaneously stripping the trench patterned resist layer, etching the barrier layer, and completing the etching of the previously partially etched trench.
An etched stack, wherein the stack comprises a barrier layer and a dielectric layer over the barrier layer, formed by the process comprising:
- placing a trench patterned resist layer over the dielectric layer;
- partially etching a trench in the dielectric layer;
- and
- simultaneously stripping the trench patterned resist layer, etching the barrier layer, and etching the trench.
Dependencies are inferred from the claim text.