Back to results
US 2002/0119663 A1Published application
Method for forming a fine structure on a surface of a semiconductor material, semiconductor materials provided with such a fine structure, and devices made of such semiconductor materials
OwnerTakashi Matsuura, Junichi Murota +1inventors
InventorsTakashi Matsuura, Junichi Murota, Mitsuo Miyamoto
Life of this patent
Estimating the term…
Abstract
A semiconductor material such as Si wafer with a fine structure (porous layer) formed, without using electrical current, on its surface by being contacted with a solution that contains fluoro-complex such as hexafluorotitanate.
Claims10
A method for forming a fine structure on a semiconductor material surface by way of contacting said semiconductor material surface with a solution that contains fluoro-complex.
Dependencies are inferred from the claim text.