Method for enhancing the adhesion of copper deposited by chemical vapor deposition

A method for depositing layers onto a substrate, comprising:

• (a) depositing a barrier layer onto a substrate, wherein a first surface of the barrier layer includes a noble metal in a quantity sufficient to affect the tendency of the first surface of the barrier layer to oxidize;
• (b) depositing a first copper layer by chemical vapor deposition (CVD) onto the first surface of the barrier layer.

A method for depositing layers onto a substrate, comprising:

• (a) depositing a barrier layer onto a substrate, wherein a first surface of the barrier layer includes refractory metals that form volatile oxides, in a quantity sufficient to affect the tendency of the first surface of the barrier layer to oxidize;
• (b) depositing a first copper layer by chemical vapor deposition (CVD) onto a first surface of the barrier layer.

A method for depositing layers onto a substrate, comprising:

• (a) depositing a barrier layer onto a substrate;
• (b) depositing a first copper layer by chemical vapor deposition (CVD) onto a first surface of the barrier layer, wherein the first copper layer is deposited from a precursor that contains less than about 2,000 ppm of water.

A method for depositing layers onto a substrate, comprising:

• (a) depositing a barrier layer onto a substrate;
• (b) removing oxide from a surface of barrier layer;.
• (c) depositing a first copper layer by chemical vapor deposition (CVD) onto the surface of the barrier layer.

A method for depositing layers onto a substrate, comprising:

• (a) depositing a barrier layer onto a substrate;
• (b) depositing a first copper layer by chemical vapor deposition (CVD) onto the surface of the barrier layer, wherein, wherein the deposition of Cu is started while the deposition of the barrier layer is still proceeding.

A method of preventing particulate formation during processing of a semiconductor substrate, wherein said processing includes deposition of a copper layer either by CVD or by electroless plating of copper, said method comprising depositing a non-oxidizing layer of material upon process apparatus surfaces prior to initiation of said deposition of said copper layer, whereby excess copper which is not deposited upon said semiconductor substrate is adhered to said non-oxidized layer of material which is present upon said process apparatus surfaces.