Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film
AssigneeNGK Insulators, Ltd.
InventorsTomohiko Shibata, Yukinori Nakamura, Mitsuhiro Tanaka, Keiichiro Asai
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Abstract
In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable for the base plate. A substrate for the film to be formed is set in the recessed portion formed by disposing the outer member on the base plate.
Claims11
A method for fabricating a semiconducting nitride film, comprising the steps of:
- preparing a susceptor tray constructed of a base plate and an outer member,
- setting a substrate in the recessed portion formed by disposing the outer member on the base plate, and
- fabricating a semiconducting nitride film on the substrate.
A susceptor tray comprising a base plate and an outer member detachable for the base plate.
A susceptor tray for fabricating a semiconducting nitride film, comprising a base plate and an outer member detachable for the base plate.
An apparatus for fabricating a semiconducting nitride film, comprising a susceptor tray including a base plate and an outer member detachable for the base plate.
Dependencies are inferred from the claim text.