Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShumpei Yamazaki, Toru Mitsuki, Tamae Takano
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Abstract
When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film contracts, so that a warp in the film occurs. Therefore, the quality of a resulting crystalline semiconductor film sometimes deteriorates. According to the present invention, it is characterized in that, after laser beam crystallization on the semiconductor film, heat treatment is carried out so as to reduce the warp in the film. Since the substrate contracts by the heat treatment, the warp in the semiconductor film is lessened, so that the physical properties of the semiconductor film can be improved.
Claims77
A method of manufacturing a semiconductor device, said method comprising the steps of:
- crystallizing an amorphous semiconductor film by irradiating with a laser light to form a crystalline semiconductor film having a warp;
- heating the crystalline semiconductor film to lessen the warp;
- etching the crystalline semiconductor film after the heating step to form a crystalline semiconductor island.
A method of manufacturing a semiconductor device, said method comprising the steps of:
- crystallizing an amorphous semiconductor film by irradiating with a laser light to form a crystalline semiconductor film having a warp;
- etching the crystalline semiconductor film to form a crystalline semiconductor island;
- heating the crystalline semiconductor island to lessen the warp.
A method of manufacturing a semiconductor device, said method comprising the steps of:
- crystallizing an amorphous semiconductor film by irradiating with a laser light to form a crystalline semiconductor film having a warp;
- heating the crystalline semiconductor film at a temperature in a range of 500° C. or higher to lessen the warp.
A method of manufacturing a semiconductor device, said method comprising the steps of:
- adding a metal element to an amorphous semiconductor film;
- first heating the amorphous semiconductor film to form a first crystalline semiconductor film;
- irradiating the first crystalline semiconductor film with a laser light to form a second crystalline semiconductor film having a warp;
- second heating the second crystalline semiconductor film at a higher temperature than the first heating step to lessen the warp.
A method of manufacturing a semiconductor device, said method comprising the steps of:
- adding a metal element to an amorphous semiconductor film;
- first heating the amorphous semiconductor film to form a first crystalline semiconductor film;
- irradiating the first crystalline semiconductor film with a laser light to form a second crystalline semiconductor film having a warp;
- second heating the second crystalline semiconductor film at a higher temperature than the first heating step to lessen the warp;
- etching the second crystalline semiconductor film after the second heating step to form a crystalline semiconductor island.
A method of manufacturing a semiconductor device, said method comprising the steps of:
- adding a metal element to an amorphous semiconductor film;
- first heating the amorphous semiconductor film to form a first crystalline semiconductor film;
- irradiating the first crystalline semiconductor film with a laser light to form a second crystalline semiconductor film having a warp;
- etching the second crystalline semiconductor film to form a crystalline semiconductor island;
- second heating the crystalline semiconductor island at a higher temperature than the first heating step to lessen the warp.
Dependencies are inferred from the claim text.