Method of manufacturing low resistivity p-type compound semiconductor material
AssigneeUnited Epitaxy Company, Ltd.
InventorsTzong-Liang Tsai, Chung-Ying Chang
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Abstract
The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
Claims70
A method of manufacturing a low resistivity p-type compound semiconductor material over a substrate, the method comprising the steps of:
- (a) forming a p-type impurity doped compound semiconductor layer on the substrate, the p-type impurity doped compound semiconductor layer having a complex formed by a p-type dopant and a hydrogen;
- and
- (b) applying a microwave treatment over the p-type impurity doped compound semiconductor layer such that the hydrogen escapes from said complex due to absorption of microwave energy of the complex and p-type dopant restores ability of an acceptor.
A method of manufacturing a light emitting diode, the light emitting diode comprising a substrate, a lower cladding layer of a first conductivity type formed on the substrate, and an active layer formed on the lower cladding layer, the method comprising the steps of:
- (a) forming an upper cladding layer of a second conductivity type on the active layer;
- and
- (b) applying a microwave treatment over the upper cladding layer.
A method of manufacturing a light emitting diode, the light emitting diode comprising a substrate, the method comprising the steps of:
- (a) forming a lower cladding layer of a first conductivity type on the substrate;
- (b) applying a microwave treatment over the lower cladding layer;
- (c) forming an active layer on the lower cladding layer of the first conductivity type;
- and
- (d) forming an upper layer of a second conductivity type on the active layer.
A method of manufacturing a light emitting diode, the light emitting diode comprising a substrate, the method comprising the steps of:
- (a) forming a lower cladding layer of a first conductivity type on the substrate;
- (b) forming an active layer on the lower cladding layer of the first conductivity type;
- and
- (c) forming an upper layer of a second conductivity type on the active layer. (d) applying a microwave treatment over the lower cladding layer;
Dependencies are inferred from the claim text.