Shift multi-exposure method
AssigneeNanya Technology Corporation
InventorsChung-Wei Hsu, Ron-Fu Chu
Life of this patent
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Abstract
The present invention provides a shift multi-exposure method for defining a regular pattern by a photomask. The method comprises the following steps. First, a photoresist layer comprising a first region and a second region is formed on a substrate. Then, a first pattern is defined on the first region by the photomask. Next, the photomask is moved a predetermined distance, and a second pattern is defined on the second region by the photomask. Finally, development is performed to display the first pattern and the second pattern on the photoresist layer.
Claims6
A shift multiexposure method for defining a regular pattern by a photomask, the method comprising the following steps:
- providing a substrate;
- forming a photoresist layer on the substrate, wherein the photoresist layer comprises a first region and a second region;
- defining a first pattern on the first region by a photomask;
- shifting the photomask a predetermined distance, then defining a second pattern on the second region by the photomask;
- and
- performing development to display the first pattern and the second pattern on the photoresist layer, wherein the regular pattern is composed by the first pattern and the second pattern.
A shift multi-exposure method for defining a pattern element by a photomask, the method comprising the following steps:
- providing a substrate;
- forming a photoresist layer on the substrate, wherein the photoresist layer comprises a first region and a second region;
- defining the pattern element on the first region by the photomask;
- shifting the photomask a predetermined distance, then defining the pattern element on the second region by the photomask;
- and
- performing development to display the pattern elements on the photoresist layer, then photoresist layer comprising regular pattern elements.
Dependencies are inferred from the claim text.