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AssigneeLSI Logic Corporation
InventorsVladimir Zubkov, Sheldon Aronowitz
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A process is provided for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds. In one embodiment, the process is carried out using a mild oxidizing agent. Also provided is a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure containing silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, where the dielectric material is characterized by the absence of aliphatic C—H bonds and where the dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.
A process for forming a low k fluorine and carbon-containing silicon oxide dielectric material comprising reacting with an oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds.
A process for forming a low k fluorine and carbon-containing silicon oxide dielectric material comprising reacting with a mild oxidizing agent one or more silanes including one or more organofluoro silanes characterized by the absence of aliphatic C—H bonds.
A low dielectric constant fluorine and carbon-containing silicon oxide dielectric material for use in an integrated circuit structure comprising silicon atoms bonded to oxygen atoms, silicon atoms bonded to carbon atoms, and carbon atoms bonded to fluorine atoms, wherein said dielectric material is characterized by the absence of aliphatic C—H bonds and wherein said dielectric material has a ratio of carbon atoms to silicon atoms of C:Si greater than about 1:3.
Dependencies are inferred from the claim text.