Stacked via with specially designed landing pad for integrated semiconductor structures
AssigneeInfineon Technologies AG
InventorsLothar Bauch, Thomas Zell, Matthias Uwe Lehr, Albrecht Kieslich
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AssigneeInfineon Technologies AG
InventorsLothar Bauch, Thomas Zell, Matthias Uwe Lehr, Albrecht Kieslich
Estimating the term…
In the fabrication of stacked vias, metal islands referred to as landing pads are introduced for the purpose of contact-connection between the vias that are arranged one above the other. The metal islands project laterally beyond the vias to a significant extent on account of the line shortening effect. The vias arranged in layers lying one above the other are laterally offset with respect to one another. The landing pad of the invention is configured as an interconnect running between the vias. On account of the line shortening effect, which is less critical for longer tracks, contact areas provided at the ends of the interconnect do not have to be chosen to be as large as the square contact areas of conventional metal islands and can therefore be accommodated to save more space on a circuit layout to be miniaturized. The shrink factor of such a semiconductor structure is increased.
In an integrated semiconductor structure having a plurality of layers, a contact structure extending through a plurality of layers and serving for electrically connecting regions of the semiconductor structure, the contact structure comprising a first contact hole filling in a first layer, a second contact hole filling in a second layer, and an intermediate structure in an intermediate layer disposed between said first layer and said second layer and connecting said first contact hole filling with said second contact hole filling, said intermediate structure forming an interconnect having a length between longitudinal ends thereof and a given width, and a contact area at each of said longitudinal ends with a contact area width greater than said given width.
Dependencies are inferred from the claim text.