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AssigneeInternational Business Corporation
InventorsStephen McConnell Gates, Jeffrey Curtis Hedrick, Satyanarayana V. Nitta, Sampath Purushothaman, Cristy Sensenich Tyberg
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An interconnect structure including a patterned multilayer of spun-on dielectrics as well as methods for manufacturing the same are provided. The interconnect structure includes a patterned multilayer of spun-on dielectrics formed on a surface of a substrate. The patterned multilayer of spun-on dielectrics is composed of a bottom low-k dielectric, a buried etch stop layer, and a top low-k dielectric, wherein the bottom and top low-k dielectrics have a first composition, the said buried etch stop layer has a second composition which is different from the first composition and the buried etch stop layer is covalently bonded to said top and bottom low-k dielectrics. The interconnect structure further includes a polish stop layer formed on the patterned multilayer of spun-on dielectrics; and metal conductive regions formed within the patterned multilayer of spun-on dielectrics. Covalent bonding is achieved by employing an organosilane having functional groups that are capable of bonding with the top and bottom dielectric layers.
An interconnect structure comprising:
A multilayer of spun-on dielectrics for use in forming interconnect structure, said multilayer of spun-on dielectrics comprising a bottom low-k dielectric, a buried etch stop layer, and a top low-k dielectric, wherein said bottom and top low-k dielectrics have a first composition, and said buried etch stop layer has a second composition which is different from said first composition and said buried etch stop layer is covalently bonded to said top and bottom low-k dielectrics.
A method of forming an interconnect structure comprising the steps of:
A method of forming an interconnect structure comprising the steps of:
Dependencies are inferred from the claim text.