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US 2002/0117727 A1Published application
Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
AssigneeMotorola, Inc.
InventorsBradley N. Engel, Jason Allen Janesky
Life of this patent
Estimating the term…
Abstract
A magnetoelectronics element (40) is provided that is comprised of a first magnetic layer (42), a first tunnel barrier layer (44) on the first magnetic layer (42), a second magnetic layer (46) on the first tunnel barrier layer (44) and a stressed over-layer (48) on said second magnetic layer (46), which is configured to alter a switching energy barrier of said second magnetic layer (46).
Claims31
A magnetoelectronics element, comprising:
- a first magnetic layer;
- a first tunnel barrier layer on said first magnetic layer;
- a second magnetic layer on said first tunnel barrier layer;
- and
- a stressed over-layer on said second magnetic layer that is configured to alter a switching energy barrier of said second magnetic layer.
2 more elements
A memory, comprising:
- a substrate;
- and
- a plurality of magnetoelectronics elements forming memory cells on said substrate, said plurality of magnetoelectronics elements comprising:
- a first magnetic layer;
- a first tunnel barrier layer on said first magnetic layer;
- a second magnetic layer on said first tunnel barrier layer;
- and
- a stressed over-layer on said second magnetic layer that is configured to alter a switching energy barrier of said second magnetic layer.
5 more elements
Dependencies are inferred from the claim text.