Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component

A method for fabricating a semiconductor component, the method which comprises:

• providing a semiconductor body having a semiconductor region of a first conductivity type;
• etching holes into the semiconductor region of the first conductivity type;
• subsequently implanting dopants of a second conductivity type opposite the first conductivity type at a bottom of each of the holes;
• producing semiconductor regions of the second conductivity type by driving the dopants into the semiconductor region of the first conductivity type;
• subsequently extending the holes deeper into the semiconductor region of the first conductivity type by performing an anisotropic etching;
• subsequently implanting dopants of the second conductivity type at the bottom of each of the holes;
• and
• connecting at least some of the semiconductor regions of the second conductivity type to a cell array disposed in the semiconductor body via filiform semiconductor zones of the second conductivity type.

A method for fabricating a semiconductor component, the method which comprises:

• providing a semiconductor body including a semiconductor region of a first conductivity type;
• providing semiconductor regions of a second conductivity type disposed in at least one plane extending essentially perpendicularly to a connecting line extending between two electrodes, the second conductivity type being opposite the first conductivity type;
• providing a cell array disposed under one of the electrodes in the semiconductor body;
• fabricating filiform semiconductor zones of the second semiconductor type by introducing trenches into the semiconductor region of the first conductivity type as far as the semiconductor regions of the second conductivity type by providing the trenches with zones of the second conductivity type in side walls of the trenches, and by filling the trenches with an insulating material;
• and
• connecting, via the filiform semiconductor zones of the second conductivity type, at least some of the semiconductor regions of the second conductivity type to a cell array disposed in the semiconductor body.

A method for fabricating a semiconductor component, comprising:

• providing a semiconductor body including a semiconductor region of a first conductivity type;
• providing semiconductor regions of a second conductivity type disposed in at least one plane extending essentially perpendicularly to a connecting line extending between two electrodes, the second conductivity type being opposite the first conductivity type;
• fabricating filiform semiconductor zones of the second semiconductor type by introducing holes into the semiconductor region of the first conductivity type such that the holes have a respective cross section tapering conically toward a hole bottom;
• and
• connecting, via the filiform semiconductor zones of the second conductivity type, at least some of the semiconductor regions of the second conductivity type to a cell array disposed in the semiconductor body.