US 2002/0117696 A1 · Semiconductor switching device

Abstract

A switching circuit device has a first FET and a second FET, and operates with single control terminal. The device also has a common input terminal connected to the drain or source electrode of the two FETs, a first output terminal and a second output terminal connected to the source or the drain electrode of the respective FET, a bias element applying an bias to the first output terminal, a first connection connecting the control terminal to the second FET, a second connection connecting the gate of the second FET to the ground, and a direct current isolation element placed between the two FETs. The device is housed in a MCP6 package with six pins.

Claims26

Dependent claims

A switching circuit device comprising:

a common input terminal pad;
a first output terminal pad and a second output terminal pad;
a first switching element connected to the common input terminal pad and the first output terminal pad;
a second switching element connected to the common input terminal pad and the second output terminal pad;
a control terminal pad connected to the first switching element and receiving a control signal for the switching device;
a first connection connecting the control terminal pad to the second switching element;
a second connection connecting the second switching element to a ground;
a ground terminal pad for the second connection;
a direct current isolation element interrupting a direct current between the second switching element and the common input terminal pad;
and
a bias element applying a bias voltage to the first switching element.

8 more elements

A semiconductor switching device comprising:

a first field effect transistor and a second field effect transistor each comprising a source electrode, a gate electrode and a drain electrode which are formed on a channel layer of the respective transistor;
a common input terminal pad connected to the source electrode or the drain electrode of the first transistor and connected to the source electrode or the drain electrode of the second transistor;
a first output terminal pad connected to the source electrode or the drain electrode of the first transistor which is not connected to the common input terminal pad;
a second output terminal pad connected to the source electrode or the drain electrode of the second transistor which is not connected to the common input terminal pad;
a control terminal pad connected to the first transistor and the second transistor;
a first connection connecting the control terminal pad to the second transistor;
a second connection connecting the gate electrode of the second transistor to a ground;
a ground terminal pad for the second connection;
an direct current isolation element interrupting a direct current between the second transistor and the common input terminal pad;
an isolation terminal pad, the direct current isolation element being connected to the isolation terminal pad;
and
a bias element applying a bias voltage to the first transistor;
wherein the first transistor and the second transistor are integrated into a chip, the isolation terminal pad, the common input terminal pad and the control terminal pad are disposed along an edge of the chip, and the first output terminal pad, the second output terminal pad and the ground terminal pad are disposed along an edge opposite to the edge with the isolation terminal pad, the common input terminal pad and the control terminal pad so that the ground terminal pad is located between the two output terminal pads.

10 more elements

A semiconductor switching device comprising:

a first field effect transistor and a second field effect transistor each comprising a source electrode, a gate electrode and a drain electrode which are formed on a channel layer of the respective transistor;
a common input terminal pad connected to the source electrode or the drain electrode of the first transistor and connected to the source electrode or the drain electrode of the second transistor;
a first output terminal pad connected to the source electrode or the drain electrode of the first transistor which is not connected to the common input terminal pad;
a second output terminal pad connected to the source electrode or the drain electrode of the second transistor which is not connected to the common input terminal pad;
a control terminal pad connected to the gate electrode of the first transistor, said control terminal receiving a control signal for the switching device;
a first connection connecting the control terminal pad to the source electrode or the drain electrode of the second transistor;
a second connection connecting the gate electrode of the second transistor to a ground;
a ground terminal pad for the second connection;
a direct current isolation element interrupting a direct current between the second transistor and the common input terminal pad;
and
a bias element applying a bias voltage to the first transistor.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor switching device

Life of this patent

Semiconductor switching device

Life of this patent

Abstract

Claims26