Method Of Manufacturing Thin Film Transistor

Abstract

For the object of reducing a burden of TFT manufacturing process and a manufacturing cost, a thin film transistor is manufactured by means of the following steps: (i) a first deposition step of depositing a light shield film (3) on a substrate (1, 2); (ii) a second deposition step of depositing a semiconductor film (4) for forming a channel of the transistor on the light shield film (3); (iii) a patterning step of shaping the light shield film (3) and the semiconductor film (4) simultaneously into the same shape pattern; (iv) an electrode forming step of forming a source electrode (7) and a drain electrode (8) which are respectively in contact with both end-portions of the shaped semiconductor film (4); (v) a step of forming an insulator film (9) so that the insulator film (9) covers the source and drain electrodes (7, 8), and the semiconductor film (4); and (vi) a step of forming a gate electrode (10) at a location on the insulator film (9), corresponding to the semiconductor film (4). The light shield film (3) and the semiconductor film (4) are simultaneously shaped into the same shape pattern without individual dedicated masking, photoresist coating and etching processes.

Dependencies are inferred from the claim text.