Method and apparatus for plasma processing

A plasma processing apparatus comprising:

• a chamber capable of storing a sample having a conductive layer to be etched with plasma;
• a gas inlet port for introducing gas containing fluorine into said chamber;
• and
• a microwave introduction mechanism, consisting of quartz at least in a part exposed to said plasma, for introducing a microwave for generating said plasma from said gas into said chamber.

A plasma processing apparatus comprising:

• a sample holder, receiving a sample having a conductive layer to be etched with plasma, capable of applying high-frequency power to said sample;
• a sample holder cover, consisting of quartz at least in a part exposed to said plasma, for covering the periphery of said sample holder without coming into contact with said sample;
• a chamber capable of storing said sample holder and said sample holder cover;
• a gas inlet port for introducing gas containing fluorine into said chamber;
• and
• a microwave introduction mechanism for introducing a microwave for generating said plasma from said gas into said chamber.

A plasma processing apparatus comprising:

• a chamber capable of storing a sample having a conductive layer to be etched with plasma;
• a gas inlet port for introducing gas into said chamber;
• and
• a microwave introduction mechanism for introducing a microwave for generating said plasma from said gas into said chamber, wherein
• said microwave introduction mechanism includes:
• a waveguide for propagating said microwave,
• a microwave introduction window having microwave transmissibility interposed between said waveguide and said chamber, and
• reflection quantity detection means detecting the quantity of reflected said microwave, and
• plasma for cleaning a part of said microwave introduction window exposed to said plasma is generated in said chamber when the quantity of reflected said microwave exceeds a prescribed level.

A plasma processing apparatus comprising:

• a chamber capable of storing a sample having a conductive layer to be processed with plasma;
• a gas inlet port for introducing gas into said chamber;
• and
• a microwave introduction mechanism for introducing a microwave for generating said plasma from said gas into said chamber, wherein
• said microwave introduction mechanism includes:
• a waveguide for propagating said microwave,
• a microwave introduction window having microwave transmissibility interposed between said waveguide and said chamber, and
• a microwave matcher for matching said microwave with said plasma by controlling the position or the quantity of a member inserted into a part propagating said microwave, and
• plasma for cleaning a part of said microwave introduction window exposed to said plasma is generated in said chamber when the position or the quantity of said member of said microwave matcher inserted into said part propagating said microwave is out of a prescribed range.