Resist film forming method and resist coating apparatus
AssigneeTokyo Electron Limited
InventorKosuke Yoshihara
Life of this patent
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Abstract
When a resist film is formed by discharging a resist solution onto the front face of a wafer housed in a cup, a relation between the film thickness of a resist film and the line width of a circuit pattern when the resist film is exposed into a predetermined pattern and thereafter developed is obtained in advance, from that relation, a line width with less variations corresponding to the changes in film thickness of the resist film is selected from among line widths within a designated region to form a resist film to have the film thickness corresponding to the selected line width. Accordingly, the line width of the circuit pattern after development is not likely to vary regardless of the changes in film thickness of the resist film formed on the wafer.
Claims20
A resist film forming method for forming a resist film by supplying a resist solution to a substrate, comprising the steps of:
- storing data of a relation between the film thickness of the resist film and the line width of a circuit pattern after development;
- and
- forming the resist film based on the stored data.
A resist film forming method for forming a resist film by supplying a resist solution onto a substrate, comprising the steps of:
- obtaining a relation between the film thickness of a resist film and the line width of a circuit pattern when the resist film is exposed into a predetermined pattern and thereafter developed, in advance;
- and
- selecting a line width with less variations corresponding to the changes in resist film thickness from among line widths within a designated region from the obtained relation and forming a resist film to have the film thickness corresponding to the selected line width.
A resist coating apparatus for forming a resist film by supplying a resist solution to a substrate, comprising:
- rotation means for rotating the substrate at a variable speed;
- a resist solution supply nozzle for supplying a predetermined amount of the resist solution to the substrate;
- and
- a control mechanism for controlling a rotation condition of said rotation means and the supply amount of said resist solution supply nozzle based on a stored data of a relation between the film thickness of a resist film and the line width of a circuit pattern after development.
A resist coating apparatus for forming a resist film by supplying a resist solution to a substrate, comprising:
- rotation means for rotating the substrate at a variable speed;
- a resist solution supply nozzle for supplying the resist solution to the substrate;
- and
- a control mechanism for controlling a rotation condition of said rotation means and the supply amount of said resist solution supply nozzle, in which a relation between the film thickness of a resist film and the line width of a circuit pattern when the resist film is exposed into a predetermined pattern and thereafter developed is set, from that relation, a line width with less variations corresponding to the changes in resist film thickness is selected from among line widths within a designated region, so that the resist film is formed to have the film thickness corresponding to the selected line width.
Dependencies are inferred from the claim text.