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US 2002/0066671 A1Published application
Seed layer deposition
AssigneeShipley Company, L.L.C.
InventorsJames G. Shelnut, David Merricks, Oleh B. Dutkewych, Charles R. Shipley
Life of this patent
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Abstract
Disclosed are methods for depositing a copper seed layer on a substrate having a conductive layer. Such methods are particularly suitable for depositing a copper seed layer on a substrate having small apertures, and preferably very small apertures.
Claims26
A method for depositing a seed layer comprising the steps of:
- contacting a substrate having a conductive layer and apertures less than or equal to 1 μm with an electroless copper plating bath;
- subjecting the substrate to a low current density for a period of time to initiate plating of copper on the conductive layer;
- discontinuing the current;
- and continuing to plate electrolessly to provide a copper seed layer.
1 more element
A method for manufacturing an electronic device comprising the step of providing a copper seed layer comprising the steps of:
- contacting an electronic device substrate having a conductive layer and apertures of ≦1 μm with an electroless copper plating bath;
- subjecting the electronic device substrate to a low current density for a period of time to initiate plating of copper on the conductive layer;
- discontinuing the current;
- and continuing to plate electrolessly to provide the copper seed layer.
1 more element
A method of enhancing a discontinuous seed layer disposed on a substrate comprising the steps of:
- contacting a substrate having a discontinuous seed layer with an electroless copper plating bath;
- subjecting the substrate to a low current density for a period of time to initiate plating of copper on the conductive layer;
- discontinuing the current;
- and continuing to plate electrolessly to provide a substantially continuous seed layer.
1 more element
Dependencies are inferred from the claim text.