Method and apparatus for polishing
AssigneeSony Corporation
InventorsKeiichi Kimura, Takashi Miyoshi
Life of this patent
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Abstract
In a Chemical Mechanical Polishing flattening processing against a surface with minute bumps and dips in a semiconductor process, this invention provides a method of polishing to be able to perform selective polishing of the bumps. A laser beam is irradiated selectively on the surface of a work piece in accordance with a shape of minute bumps and dips on the surface of the work piece, thereby performing a removal control for the minute region and enabling to selectively polish particularly surface bumps.
Claims10
A method of polishing a surface of a member by using a slurry including particles, comprising the steps of:
- irradiating a laser beam on a surface position wherefrom a selectively large amount of removal is desired by polishing;
- and
- polishing, with said slurry, said surface position on which said laser beam is irradiated.
An apparatus for polishing a surface of a member to be processed having bumps and dips against a plane or curved surface targeted for processing by using a slurry including particles, comprising:
- a laser optical system for projective irradiation of a laser beam;
- and
- a polishing tool system for providing pressure in an axial direction and rotational motion;
- whereby said irradiation of the laser beam and said polishing are performed simultaneously or successively on the same position of the surface of the member by exercising relative motion of said laser optical system and said polishing tool system with the surface of the member.
Dependencies are inferred from the claim text.