Method of controlling wafer polishing time using sample-skip algorithm and wafer polishing using the same

Abstract

A method of controlling a wafer polishing time using a sample-skip algorithm and a method of polishing a wafer using the same are provided. According to the method of controlling a wafer polishing time, a chemical mechanical polishing (CMP) process is performed on a plurality of wafers of an n-th lot among a plurality of lots, each lot consisting of a plurality of wafers, for a time Δt(n), to calculate the amount removed ΔToxP(n) from a polished layer on the wafer. The removal rate RRb(n) of a layer on a blanket wafer is calculated from the amount removed ΔToxP(n). A CMP time Δt(n+1) is determined for wafers of an n+1-th lot using the relationship equation Δt(n+1)={ΔToxT(n+1)+A}/RRb(n) where “A” is a constant and ΔToxT(n+1) is the target amount of a layer to be removed from a wafer of an n+1-th lot.

Dependencies are inferred from the claim text.