Capacitor of a semiconductor device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorSeung Kyu Han
Life of this patent
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Abstract
A capacitor of a semiconductor device and the method of manufacture thereof, includes the steps of providing a semiconductor substrate; forming a lower electrode on the semiconductor substrate; forming a nitride layer on the upper part of the lower electrode; forming an oxide tin layer SnO2 on the upper part of the nitride layer; forming an amorphous TaON layer on the upper part of the oxide tin layer; diffusing oxygen and tin in the oxide tin layer and amorphous TaON layer by thermal treatment, thereby changing the layers into Ta—O—Sn layer; and forming an upper electrode on the upper part of the Ta—O—Sn layer.
Claims36
A method of manufacturing a capacitor of a semiconductor device comprising the steps of:
- providing a semiconductor substrate;
- forming a lower electrode on the semiconductor substrate;
- forming a Ta—O—Sn layer on the lower electrode;
- and
- forming an upper electrode on the Ta—O—Sn layer.
The method of manufacturing a capacitor of a semiconductor device comprising the steps of:
- providing a semiconductor substrate;
- forming a lower electrode on the semiconductor substrate;
- forming a nitride layer on the lower electrode;
- forming an oxide tin layer on the nitride layer;
- forming an amorphous TaON layer on the oxide tin layer;
- diffusing oxygen and tin in the oxide tin layer and in the amorphous TaON layer by a thermal treatment, thereby changing the oxide tin layer and the amorphous TaON layer into a Ta—O—Sn layer;
- and
- forming an upper electrode on the Ta—O—Sn layer.
The method of manufacturing a capacitor of a semiconductor device comprising the steps of:
- providing a semiconductor substrate;
- forming an interlayer insulating layer on the semiconductor substrate;
- selectively patterning an interlayer insulating layer to form a first contact hole;
- forming a contact plug in the first contact hole;
- forming a cap oxide layer on the interlayer insulating layer including the contact plug;
- selectively removing the cap oxide layer to form a second contact hole exposing the contact plug;
- forming a conductive material layer on the cap oxide layer including the second contact hole;
- selectively removing the conductive material layer until the cap oxide layer is exposed to form a lower electrode;
- removing the cap oxide layer and then forming a nitride layer on the resultant structure;
- forming an oxide tin layer on the upper part of the nitride layer;
- forming an amorphous TaON layer on the upper part of the oxide tin layer;
- diffusing oxygen and tin in the amorphous TaON layer and the oxide tin layer by thermal treatment, thereby changing the layers into a Ta—O—Sn layer;
- and
- forming an upper electrode on the Ta—O—Sn layer.
The method of manufacturing a capacitor of a semiconductor device comprising:
- a semiconductor substrate;
- a lower electrode formed on the semiconductor substrate;
- an oxide tin layer SnO2 formed on the lower electrode;
- a crystallized TaON layer formed on the oxide tin layer;
- and
- an upper electrode formed on the crystallized TaON layer.
Dependencies are inferred from the claim text.