Vertical color filter detector group and array

A vertical color filter detector group formed on a semiconductor substrate of a first conductivity type comprising:

• a first well of a second conductivity type opposite said first conductivity type formed in the substrate;
• a first epitaxial layer of said first conductivity type formed over an upper surface of said semiconductor substrate;
• a second well of said second conductivity type formed in said first epitaxial layer in substantial vertical alignment with said first well;
• a second epitaxial layer of said first conductivity type formed over an upper surface of said first epitaxial layer;
• a shallow diffusion of said second conductivity type formed in said second epitaxial layer in substantial vertical alignment with said first well;
• wherein said substrate and said first and second epitaxial regions are coupled to a reference potential.

A method for fabricating a vertical color filter detector group comprising:

• providing a semiconductor substrate of a first conductivity type;
• forming a first well of a second conductivity type opposite to said first conductivity type in said semiconductor substrate;
• forming a first epitaxial layer of said first conductivity type over said first well and said semiconductor substrate;
• forming a lower portion of a first contact plug in said first epitaxial layer to contact said first well;
• forming a second well of said second conductivity type in said first epitaxial layer substantially in vertical alignment with said first well;
• forming a second epitaxial layer of said first conductivity type over said second well and said first epitaxial layer;
• forming an upper portion of said first contact plug and a second contact plug in said second epitaxial layer, said upper portion of said first contact plug contacting said lower portion of said first contact plug in said first epitaxial layer and said second contact plug contacting said second well;
• and
• forming a shallow diffusion of said second conductivity type in said second epitaxial layer substantially in vertical alignment with said first well.

A method for fabricating a vertical color filter detector group comprising:

• providing a semiconductor substrate of a first conductivity type;
• forming a first well of a second conductivity type opposite to said first conductivity type in said semiconductor substrate;
• forming a first epitaxial layer of said first conductivity type over said first well and said semiconductor substrate;
• forming a lower portion of a first contact plug in said first epitaxial layer to contact said first well by implanting atoms of said second conductivity type a first time at a first energy level and then implanting atoms of said second conductivity type a second time, at a second energy level different from said first energy level;
• forming a second well of said second conductivity type in said first epitaxial layer substantially in vertical alignment with said first well;
• forming a second epitaxial layer of said first conductivity type over said first epitaxial layer and said second well;
• forming an upper portion of said first contact plug and a second contact plug in said second epitaxial layer, said upper portion of said first contact plug contacting said lower portion of said first contact plug in said first epitaxial layer and said second contact plug contacting said second well;
• and
• forming a shallow diffusion of said second conductivity type in said second epitaxial layer substantially in vertical alignment with said first well.