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US 2002/0055244 A1Published application
Method of forming a substrate contact in a field effect transistor formed over a buried insulator layer
AssigneeAdvanced Micro Devices, Inc.
InventorsGert Burbach, Frank Heinlein, Johannes Groschopf, Gotthard Jungnickel, Hartmut Ruelke, Carsten Hartig
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Abstract
A method comprises a “two-step” formation of a front side substrate contact in an FET formed over a buried insulator layer on a substrate, thereby avoiding the difficulties and problems involved in etching openings of high aspect ratio through a stack of different materials, as in a conventional front side substrate contact opening.
Claims15
A method of forming a substrate contact in a field effect transistor, comprising:
- providing a substrate with an insulation layer formed thereon;
- forming a semiconductor layer above the insulation layer;
- forming a transistor in an active region of said semiconductor layer;
- forming a first part of said substrate contact, said first part extending through said insulation layer and contacting said substrate, said first part having a first end that extends above a surface of said semiconductor layer;
- and
- forming a second part of said substrate contact above said first part of said substrate contact, said second part being electrically coupled to said first end of said first part of said substrate contact.
3 more elements
Dependencies are inferred from the claim text.