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US 2002/0055209 A1Published application
Thin film semiconductor device and production method for the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsNaoto Kusumoto, Yasuhiko Takemura, Hisashi Ohtani
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Abstract
An amorphous semiconductor film having a thickness of 400 Å or more is formed on a=insulating surface and is wholly or selectively etched to form a region having a thickness of 300 Å or less. This is used as a channel-forming region in a TFT.
Claims20
A semiconductor device comprising:
- a substrate;
- a semiconductor film provided over said substrate and comprising a first part and a second part, said first part thicker than said second part;
- a channel formation region provided in said second part of said semiconductor film;
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- and
- a source region and a drain region sandwiching said channel formation region therebetween and provided in said semiconductor film,
- wherein at least one of said source region and said drain region has a first thickness in said first part of said semiconductor film and has a second thickness in said second part of said semiconductor film, said first thickness greater than said second thickness, and
- wherein said second part of said semiconductor film comprises said channel formation region and a part of said one of said source region and said drain region and has a thickness of 300 Å or less.
5 more elements
A semiconductor device comprising:
- a substrate;
- a semiconductor film provided over said substrate and comprising a first part and a second part, said first part thicker than said second part;
- a channel formation region provided in said second part of said semiconductor film;
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- a source region and a drain region sandwiching said channel formation region therebetween and provided in said semiconductor film;
- and
- an electrode connected with at least one of said source region and said drain region at a part of said one of said source region and said drain region provided in said first part of said semiconductor film,
- wherein said one of said source region and said drain region has a first thickness in said first part of said semiconductor film and has a second thickness in said second part of said semiconductor film, said first thickness greater than said second thickness, and
- wherein said second part of said semiconductor film comprises said channel formation region and a part of said one of said source region and said drain region and has a thickness of 300 Å or less.
6 more elements
A semiconductor device comprising:
- a substrate;
- a semiconductor film provided over said substrate and comprising a first part and a second part, said first part thicker than said second part;
- a channel formation region provided in said second part of said semiconductor film;
- a gate electrode provided adjacent to said channel formation region with a gate insulating film therebetween;
- and
- a source region and a drain region sandwiching said channel formation region therebetween and provided in said semiconductor film,
- wherein at least one of said source region and said drain region has a first thickness in said first part of said semiconductor film and has a second thickness in said second part of said semiconductor film,>aid first thickness greater than said second thickness,
- wherein said second part of said semiconductor film comprises said channel formation region and a part of said one of said source region and said drain region and has a thickness of 300 Å or less, and
- wherein said gate insulating film has a thickness of 500 Å or less.
6 more elements
A device according to claim I wherein said gate insulating film comprises silicon oxide.
A device according to claim -3 wherein said semiconductor film comprises silicon.
Dependencies are inferred from the claim text.