Reticle having accessory pattern divided into sub-patterns

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first layer on a semiconductor substrate;
• forming a photosensitive layer on said first layer;
• forming a first opening in said photoresitive layer by a photolithography process using a reticle having an accessory pattern divided into a set of continuously arranged sub-patterns;
• forming a second opening in said first layer by etching said first layer using said photosensitive layer having said first opening as a mask;
• removing said photosensitive layer after said second opening is formed;
• forming a second layer having a thickness sufficiently less than a width of said second opening after said photosensitive layer is removed;
• coating a third layer on said second layer so that said third layer is buried in said second opening;
• etching back said third layer to expose said second layer while leaving said third layer in said second opening;
• etching back said second layer to make said second layer form a U-shape after said third layer is etched back;
• and
• removing sequentially said third and second layers after said second layer is etched back, so that said second U-shape layer is formed on said semiconductor substrate.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a first silicon oxide layer on a semiconductor substrate;
• forming a silicon nitride layer on said first silicon oxide layer;
• forming a second silicon oxide layer on said silicon nitride layer;
• forming a photosensitive layer on said second silicon oxide layer;
• forming a first opening in said photoresitive layer by a photolithography process using a reticle having an accessory pattern divided into a set of continuously arranged sub-patterns;
• forming second opening in said second silicon oxide layer and said silicon nitride layer by etching said second silicon layer and said silicon nitride layer using said photosensitive layer having said first opening as a mask;
• removing said photosensitive layer after said second opening is formed;
• forming a conductive layer having a thickness sufficiently less than a width of said second opening after said photosensitive layer is removed;
• coating a buried layer on said conductive layer so that said buried layer is buried in said second opening;
• etching back said buried layer to expose said conductive layer while leaving said buried layer in said second opening;
• etching back said conductive layer to make said conductive layer form a U-shape after said buried layer is etched back;
• and
• removing sequentially said buried layer and said second silicon oxide layer after said conductive layer is etched back, so that said U-shaped conductive layer is formed on said semiconductor substrate.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first layer on a semiconductor substrate;
• forming a photosensitive layer on said first layer;
• forming first and second openings in said photoresitive layer by a photolithography process using a reticle having an accessory pattern divided into a set of continuously arranged sub-patterns and a principal pattern, said first and second openings corresponding to said accessory pattern and said principal pattern, respectively;
• forming third and fourth openings in said first layer by etching said first layer using said photosensitive layer having said first and second openings as a mask;
• removing said photosensitive layer after said second opening is formed;
• forming a second layer having a thickness sufficiently less than a width of said third and fourth openings after said photosensitive layer is removed;
• coating a third layer on said second layer so that said third layer is buried in said third and fourth openings;
• etching back said third layer to expose said second layer while leaving said third layer in said third and fourth openings;
• etching back said second layer to make said second layer form a U-shape after said third layer is etched back;
• and
• removing sequentially said third and second layers after said second layer is etched back, so that said second U-shaped layer is formed on said semiconductor substrate.

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first silicon oxide layer on a semiconductor substrate;
• forming a silicon nitride layer on said first silicon oxide layer;
• forming a second silicon oxide layer on said silicon nitride layer;
• forming a photosensitive layer on said second silicon oxide layer;
• forming first and second openings in said photoresitive layer by a photolithography process using a reticle having an accessory pattern divided into a set of continuously arranged sub-patterns and a principal pattern, said first and second openings corresponding to said accessory pattern and said principal pattern, respectively;
• forming third and fourth openings in said second silicon oxide layer and said silicon nitride layer by etching said second silicon layer and said silicon nitride layer using said photosensitive layer having said first and second openings as a mask;
• removing said photosensitive layer after said second opening is formed;
• forming a conductive layer having a thickness sufficiently less than a width of said third and fourth openings after said photosensitive layer is removed;
• coating a buried layer on said conductive layer so that said buried layer is buried in said third and fourth openings;
• etching back said buried layer to expose said conductive layer while leaving said buried layer in said third and fourth openings;
• etching back said conductive layer to make said conductive layer form a U-shape after said buried layer is etched back;
• and
• removing sequentially said buried layer and said second silicon oxide layer after said conductive layer is etched back, so that said U-shaped conductive layer is formed on said semiconductor substrate.