Electrostatic discharge protection device for an integrated transistor
AssigneeSTMicroelectronics S.r.l.
InventorsPascal Salome, Guy Mabboux
Life of this patent
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Abstract
A protection device includes a switching transistor (M11), connected between the gate of the output transistor (TS1) and ground, and a control circuit (CM), connected to the gate of the switching transistor (M11), which are capable of ensuring that the switching transistor (M11) is off when there is no electrostatic discharge at the drain of the output transistor (TS1) and capable of turning the switching transistor (M11) on when there is an electrostatic discharge at the drain of the output transistor (TS1).
Claims20
An electrostatic discharge protection device for an integrated circuit, comprising:
- a switching transistor, connected between the gate of an output transistor and ground;
- and
- control means, connected to the gate of the switching transistor, for
- ensuring that the switching transistor is off when there is no electrostatic discharge at the drain of the output transistor, and
- turning the switching transistor on when there is an electrostatic discharge at the drain of the output transistor.
An integrated circuit comprising:
- at least one output transistor;
- and
- at least one electrostatic discharge protection device, electrically connected between the gate of the at least one output transistor and ground, the at least one electrostatic discharge protection device comprising:
- a switching transistor, connected between a gate of the at least one output transistor and ground;
- and
- control means, connected to the gate of the switching transistor, for
- ensuring that the switching transistor is off when there is no electrostatic discharge at a drain of the at least one output transistor, and
- turning the switching transistor on when there is an electrostatic discharge at the drain of the at least one output transistor.
Dependencies are inferred from the claim text.