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US 2002/0053748 A1Published application
Phaseshift mask and manufacturing the same
AssigneeHitachi, Ltd.
InventorsToshihiko Tanaka, Norio Hasegawa
Life of this patent
Estimating the term…
Abstract
The present invention provides a method of manufacturing halftone phase shift masks in less steps to save time and cost and to increase the yield, and a halftone phase shift mask with higher phase—and size controllability. To achieve this, the halftone phase shift mask includes a structure having a shade band of resist film formed on the halftone film delineating fine patterns and around the area of fine pattern.
Claims13
A phase shift mask, comprising:
- a transparent plate,
- a phase shifter pattern provided on said transparent plate for attenuating exposure light and for shifting the phase of the exposure light;
- and
- a resist film for partially covering a top surface of said transparent plate around the outer circumferences of said phase shifter pattern.
1 more element
A halftone phase shift mask, comprising:
- a transparent plate;
- a halftone phase shift film provided on said transparent plate for forming a circuit pattern area;
- a resist film provided on said phase shift film so as to enclose the outer circumferences of said circuit pattern area.
A method of manufacturing a phase shift mask, comprising the steps of:
- providing a mask plate having a phase shifter for attenuating exposure light and for shifting the phase of the exposure light on one principal plane of a transparent plate;
- patterning said phase shifter for forming a circuit pattern area;
- depositing a resist film on thus patterned phase shifter;
- and
- removing said resist film deposited within said circuit pattern area as well as on the outer circumference of said transparent plate while leaving the resist film partially on the outer periphery of said circuit pattern area.
2 more elements
A method of manufacturing a photomask, comprising the steps of:
- providing a photomask having a phase shifter formed for defining a circuit pattern area on an upward surface and having a resist film deposited on said phase shifter around said circuit pattern area;
- and
- inspecting said photomask by emitting light on said circuit pattern area and by observing the fluorescence generated by the resist material remaining thereon.
Dependencies are inferred from the claim text.