Power semiconductor device
AssigneeInfineon Technologies AG
InventorMichael Stoisiek
Life of this patent
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Abstract
Component having a blocking pn junction having an edge termination structure which is formed by a further, more weakly doped region (5) and a trench (8) formed therein, said trench being filled with a dielectric. The dielectric material in the trench (8) diverts the equipotential areas from the horizontal in a very confined space in the vertical direction, with the result that the electric field can emerge from the component within a small region of the chip surface.
Claims4
A component having a semiconductor body having a main side and having a pn junction (3) between doped regions (1, 2), in which the pn junction occupies a portion of a plane that is coplanar with respect to the main side, and has edges which run toward a surface of the main side, wherein the doped region (2), which is arranged on that side of the pn junction (3) which faces the main side, is laterally surrounded by a further doped region (5), which has the same sign of electrical conductivity with a lower doping concentration, and a dielectric region (8) oriented essentially perpendicularly to the main side is present in said further region and in a manner reaching right into the doped region (1) on the opposite side of the pn junction.
Dependencies are inferred from the claim text.