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US 2002/0053683 A1Published application
Method of manufacturing a semiconductor component and semiconductor component thereof
AssigneeFreescale Semiconductor, Inc.
InventorsDarrell G. Hill, Mariam G. Sadaka, Jonathan K. Abrokwah
Life of this patent
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Abstract
A method of manufacturing a semiconductor component and the component thereof includes forming a dielectric layer (620) over a portion of a passivation ledge (640) in an emitter layer (280) and overlapping a base contact (660) onto the dielectric layer (620).
Claims14
A method for fabricating a semiconductor component comprising:
- a) forming a layer of dielectric over at least a portion of a passivation ledge in an emitter layer;
- and
- b) overlapping a base contact onto the dielectric layer to form a semiconductor component.
A method of fabricating a bipolar transistor comprising:
- a) providing a material structure comprising a subcollector layer, a collector layer, a base layer deposited over the collector layer, and an emitter layer having a surface passivation ledge disposed on the base layer;
- b) forming a dielectric layer in the passivation ledge;
- and
- c) overlapping a base contact onto the dielectric layer to form a bipolar transistor.
1 more element
A method for fabricating a heterojunction bipolar transistor (HBT) comprising:
- a) providing a semiconductor device having a substrate layer, a subcollector layer, a collector layer, a base layer and an emitter layer, each layer formed on top of a preceeding layer;
- b) etching the emitter layer to form an emitter mesa and a thin passivating ledge;
- and
- c) depositing a metal layer on the base layer and the passivating ledge to form base contacts that are self aligned with respect to the ledge.
1 more element
A semiconductor component comprising:
- (a) a semiconductor substrate having an emitter layer, a base layer and a collector layer;
- (b) a dielectric layer formed over a passivation ledge in the emitter layer;
- and
- (c) a base contact disposed on the dielectric layer.
1 more element
A heterojunction bipolar transistor (HBT) comprising:
- a) a substrate layer, a subcollector layer, a collector layer, a base layer and an emitter layer, each layer formed on top of the preceding layer;
- b) an emitter mesa and a thin passivating ledge formed in the emitter layer;
- c) base contacts deposited on the base layer wherein the base contacts are self aligned with respect to the passivating ledge.
Dependencies are inferred from the claim text.