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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKunihiro Hosono, Satoshi Aoyama
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Provided are a manufacturing process for a semiconductor device capable of transferring a pattern corrected with respect of optical distortion of an exposure apparatus, a mask, and a manufacturing apparatus for a semiconductor device. The manufacturing process, regarding optical distortion of said exposure apparatus as a variation in reduction rate of a transferred pattern in each of regions, includes: a first step transferring a fundamental pattern formed on a reference photomask for measuring the optical distortion to measure a size of a transferred pattern in a corresponding one of regions; and a second step of, based on a result obtained in said first step, forming a corrected photomask having a pattern corrected in said corresponding one of regions with respect to said optical distortion.
A manufacturing process for a semiconductor device including a step of transferring a pattern on a photomask onto a semiconductor wafer by means of an exposure apparatus, regarding optical distortion of said exposure apparatus as a variation in reduction rate of a transferred pattern in each of regions of a photomask, including:
A photomask is a photomask having a pattern thereon, employed in transfer of said pattern onto a semiconductor wafer by means of an exposure apparatus, wherein, correction of a size of a pattern on said photomask is performed such that correction is effected on a variation in reduction rate of a transferred pattern in each of regions caused by optical distortion of said exposure apparatus.
Dependencies are inferred from the claim text.