Method for manufacturing zirconium oxide film for use in semiconductor device

Abstract

A method for manufacturing a zirconium oxide film for use in a semiconductor device by using an atomic layer deposition (ALD) which begins with setting a wafer in a reaction chamber. Thereafter, a zirconium source material of Zr(OC(CH3)3)4 (zirconium tetra—tert—butoxide) is supplied into the reaction chamber and then, an unreacted Zr(OC(CH3)3)4 is removed by a N2 purge or a vacuum purge. Subsequently, an oxygen source material is supplied into the reaction chamber, wherein the oxygen source material is selected from the group consisting of vaporized water (H2O), O2 gas, N2O gas and O3 gas. Finally, an unreacted oxygen source material is purged out from the reaction chamber.

Dependencies are inferred from the claim text.