Method of manufacturing semiconductor device, and semiconductor device manufactured thereby

Abstract

There is described a method of manufacturing a semiconductor device for accurately and anisotropically etching desired locations on a semiconductor wafer at high selectivity. A polysilicon layer which is to act as a floating gate is embedded in the surface of an oxide film insulating layer. Control gates are formed in a direction orthogonal to the polysilicon layer. Exposed portions of the polysilicon layer are subjected to dry-etching, thereby forming a floating gate. Residues remaining in the channels formed in the oxide film insulating layer are removed by means of wet etching.

Dependencies are inferred from the claim text.