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US 2002/0001950 A1Published application
Method of manufacturing copper wiring in a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorHeon Do Kim
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Abstract
A method of manufacturing copper wiring in a semiconductor device by forming a diffusion prevention film on a damascene pattern, forming a first copper film by a PVD method, forming a second copper film by a spin-on coating method, and forming a third copper film by a PVD or electrochemical deposition method. The method provides a good coverage characteristic and can prevent generation of voids etc., thus improving reliability of the device.
Claims13
A method of manufacturing copper wiring in a semiconductor device, comprising the steps of:
- providing a semiconductor substrate in which a predetermined structure is formed, said substrate having an underlying conductive layer,
- forming an insulating film on said substrate, patterning said insulating film by a dual damascene process to form a trench through which the underlying conductive layer of said semiconductor substrate is exposed, said conductive layer having a metal oxide film remaining thereon;
- removing the metal oxide film remaining on the exposed underlying conductive layer to form a diffusion prevention film;
- forming a first copper film on the entire structure;
- thereafter forming a second copper film and performing an annealing process until a desired thickness is formed, thus forming a copper oxide film on said second copper film;
- removing said copper oxide film to form a third copper film on the entire structure;
- and
- polishing said third, second, and first copper films, and said diffusion prevention film by a CMP process to form copper wiring.
5 more elements
Dependencies are inferred from the claim text.