Method and fabricating metal interconnection with reliability using ionized physical vapor deposition

Abstract

A method for forming a multilayer metal thin film capable of improving electromigration reliability. The method includes steps of forming a Ti film having an <002> crystal orientation by using an ionized physical vapor deposition method, forming a TiN film on the Ti film in order to form a multilayer stack, wherein the TiN film has an <111> crystal orientation, and forming an aluminum film on the multilayer stack in an <111> crystal orientation. Accordingly, the aluminum metal interconnection increases the <002> orientation of the Ti film and improves the <111> orientation of the aluminum to control electromigration resistance, by using the IPVD method in forming the Ti film as an underlayer of the aluminum film.

Dependencies are inferred from the claim text.