Metallization structures for semiconductor device interconnects, methods for making same, and semiconductor devices including same

A method for making a metallization structure comprising:

• forming a substrate comprising at least one metal layer on the surface thereof;
• forming a dielectric layer over at least one the metal layer;
• forming an aperture having at least one sidewall through the dielectric layer to expose a surface of the at least one metal layer;
• forming a metal spacer on the at least one sidewall of the aperture;
• and
• forming a conductive layer in a remaining portion of the aperture.

A method for making a metallization structure comprising:

• forming a substrate comprising at least one metal layer on the surface thereof;
• forming a dielectric layer over the at least one metal layer;
• forming an aperture through the dielectric layer to expose a surface of the at least one metal layer;
• forming a conducting layer in the aperture;
• forming at least one upper metal layer overlying the dielectric layer and the conducting layer in the aperture;
• removing portions of the at least one upper metal layer overlying the dielectric layer, removing the dielectric layer, and removing portions of the at least one metal layer surrounding the conducting layer to form a multi-layer metal structure having at least one sidewall;
• and
• forming a metal spacer on the at least one sidewall of the multi-layer metal structure.