Semiconductor device manufacturing method

A semiconductor device manufacturing method comprising the steps of:

• forming a first insulating film, a first organic insulating film, and a second insulating film in sequence on a semiconductor substrate;
• forming a first opening having a via pattern profile by etching the second insulating film partially;
• forming a second opening having a via pattern profile in the first organic insulating film by etching the first organic insulating film through the first opening of the second insulating film;
• forming a third opening having a wiring pattern profile by etching a portion of the second insulating film which contains the first opening, and simultaneously forming a fourth opening in the first insulating film by etching the first insulating film below the second insulating film through the second opening of the first organic insulating film, the fourth opening being applied as the via-hole;
• forming a fifth opening in the first organic insulating film by etching the first organic insulating film through the third opening of the second insulating film, the fifth opening and the third opening being applied to a wiring recess;
• and
• forming a via in the via-hole and forming a wiring in the wiring recess by burying a conductive material simultaneously into the via-hole and the wiring recess.

A semiconductor device manufacturing method comprising the steps of:

• forming a first insulating film and a second insulating film in sequence on a semiconductor substrate;
• forming first photoresist including a first window having a via pattern profile on the second insulating film;
• forming a first opening having the via pattern profile by etching the second insulating film using the first photoresist as a mask;
• forming a second opening having the via pattern profile by etching the first insulating film through the first opening;
• forming second photoresist having a wiring pattern on the second insulating film;
• forming a third opening having the wiring pattern by etching the second insulating film using the second photoresist as a mask;
• forming a fourth opening having the wiring pattern by etching an upper portion of the first insulating film through the third opening;
• and
• forming a wiring in the third opening and the fourth opening and forming a via in the second opening by burying a conductive material into the second opening, the third opening, and the fourth opening.