Method for forming conductive contact of semiconductor device

A method for manufacturing a conductive contact of a semiconductor device, comprising the steps of:

• providing a semiconductor substrate;
• forming a conductive pattern including a plurality of conductive lines;
• forming a shielding dielectric layer covering the sides and top )f the conductive pattern;
• forming a dummy dielectric layer covering the conductive pattern and at least a portion of the substrate between the conductive lines, the dummy dielectric layer comprising an organic material;
• patterning the dummy dielectric layer to define a contact area covered by the dummy dielectric layer, and forming a dummy opening in the dummy dielectric layer adjacent the contact area;
• filling the dummy opening with an interdielectric material having a lower etch-rate than that of the dummy dielectric layer by selective liquid phase deposition of silicon dioxide (SiO2) in the dummy opening;
• forming a contact opening and exposing the contact area of the semiconductor substrate and the conductive pattern by selectively etching the dummy dielectric layer covering the contact area using the interdielectric layer adjacent the contact area as an etching mask;
• forming a conductive layer which fills the contact opening and is electrically connected to the semiconductor substrate;
• and
• etching the upper surfaces of the conductive layer and the interdielectric layer pattern to form at least one conductive contact body surrounded by the shielding dielectric layer and the etched interdielectric layer pattern.

A method of forming a conductive contact in a semiconductor device, comprising the steps of:

• providing a semiconductor substrate;
• forming a conductive pattern on the substrate;
• covering the sides of the conductive pattern with a first shielding dielectric material;
• covering the top of the conductive pattern with a second shielding dielectric material;
• forming a dummy dielectric layer covering the substrate and the conductive pattern;
• patterning the dummy dielectric layer to define a contact area and to form a dummy opening exposing a portion of the substrate and a portion of the conductive pattern adjacent to the contact area;
• depositing an interdielectric material in the dummy opening, the interdielectric material selected to have a higher etch resistance than the material forming the dummy dielectric layer and the first and second shielding dielectric materials;
• forming a contact opening by selectively etching the dummy dielectric layer to expose the contact area of the substrate and the conductive pattern;
• and,
• depositing a conductive material in the contact opening and forming an electrical contact in electrical contact with the contact area of the substrate and which is electrically isolated from the conductive pattern.