Method for manufacturing semiconductor device

Abstract

The present invention is characterized by providing epitaxial growth of a semiconductor layer on the surface of a wafer not provided with mirror finishing and having irregularity, introducing impurities having different conductivity type in the epitaxially grown semiconductor layer to form at least a pn junction, and further providing rapid thermal anneal by rapid heating-up and rapid cooling-down in any step in the manufacturing process. By so processing, there can be obtained a semiconductor device having high speed switching characteristics in stable manner without causing problems in manufacturing process such as diffusion of heavy metal or irradiation of corpuscular ray.

Dependencies are inferred from the claim text.