Method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites, and a device fabricated by the method
AssigneeSTMicroelectronics S.r.l.
InventorsMario Saggio, Vito Raineri, Umberto Stagnitti, Sebastiano Mugavero
Life of this patent
Estimating the term…
Abstract
A method of fabricating electronic devices, integrated monolithically in a semiconductor substrate having at least one non-active area contiguous with at least one device active area, which method comprises at least one step of implanting ions of a noble gas, followed by a thermal treatment to form getter microcavities in the semiconductor by evaporation of the noble gas, wherein the implanting step is carried out in the non-active area of the semiconductor.
Claims7
A method of fabricating electronic devices, integrated monolithically in a semiconductor substrate having a non-active area contiguous with a device active area, the method comprising implanting ions of a noble gas in said non-active area of said semiconductor substrate, followed by a thermal treatment to form getter microcavities in said non-active area by evaporation of said noble gas ions.
An electronic device, comprising a semiconductor substrate having a non-active area and an active area contiguous with each other the non-active area includes getter microcavities formed by implantation of noble gas ions followed by thermal treatment to evaporate said gas.
Dependencies are inferred from the claim text.