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US 2002/0001918 A1Published application
Method for forming a field oxide film on a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorMyoung Kyu Park
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Abstract
The present invention provides a method for forming a field oxide film on a semiconductor device. In particular, the present invention provides a method for forming a field oxide film on a semiconductor device using a silicon epitaxial layer to improve a Shallow Trench Isolation (STI) process.
Claims17
A method for forming a field oxide film on a semiconductor device comprising the steps of:
- producing a thermal oxidation mask on a silicon substrate;
- producing a channel on said silicon substrate using said thermal oxidation mask;
- producing a silicon epitaxial layer on the surface of said silicon substrate channel;
- producing a spacer mask on side surfaces of said thermal oxidation mask;
- producing a smooth edged silicon epitaxial layer near the interface between said spacer mask and said silicon epitaxial layer;
- and
- producing a field oxide film on said silicon substrate.
4 more elements
A method for forming a field oxide film on a semiconductor device comprising the steps of:
- forming a thermal oxidation mask on a silicon substrate, wherein said thermal oxidation mask comprises silicon nitride film;
- forming a channel on the exposed regions of said silicon substrate;
- forming a silicon epitaxial layer on the surface of said silicon substrate channel;
- forming an oxide film spacer mask on side surfaces of said thermal oxidation mask;
- forming a smooth edged silicon epitaxial layer near the interface between said oxide film spacer mask and said silicon epitaxial layer by oxidizing the exposed silicon epitaxial layer;
- and
- forming a field oxide film on said silicon substrate.
4 more elements
Dependencies are inferred from the claim text.