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US 2002/0001907 A1Published application
Method of forming an EPI - channel in a semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsDae Hee Weon, Seung Ho Hahn
Life of this patent
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Abstract
An epi-channel of a uniform shape is formed by adjusting the temperature and pressure of H2 bake process to prevent the etching of a separation oxide at an interface of an active region and a field region thereby ensuring that an epi-channel is formed having a uniform shape.
Claims20
A method of forming an epi-channel in a semiconductor device, comprising:
- sequentially forming a pad oxide film and a nitride film on a surface of a semiconductor substrate and then patterning the pad oxide film and the nitride film to leave an exposed portion of the semiconductor substrate;
- etching the exposed portion of the semiconductor substrate to form a trench structure and then covering said trench structure with an insulating material;
- removing said nitride film and then implementing an ion implantation process for forming a well;
- forming a screen oxide film in the well and then implementing an ion implantation process for adjusting a threshold voltage;
- removing crystal defects and the screen oxide film on the surface of said semiconductor substrate by a H2 bake process;
- and
- growing the exposed semiconductor substrate by a SEG process to form an epi-channel.
4 more elements
A method of forming an epi-channel in a semiconductor device, comprising:
- sequentially forming a pad oxide film and a nitride film on a surface of a semiconductor substrate and then patterning the pad oxide film and the nitride film to leave an exposed portion of the semiconductor substrate;
- etching the exposed portion of the semiconductor substrate to form a trench structure and then burying said trench structure with an insulating material;
- removing said nitride film and then implementing an ion implantation process for forming a well;
- forming a screen oxide film in the well and then implementing an ion implantation process for adjusting a threshold voltage;
- removing crystal defects and the screen oxide film on the surface of said semiconductor substrate by a H2 bake process wherein said H2 bake process is in-situ implemented under a pressure ranging from about 0.1 Torr to about 10 Torr and at the temperature ranging from about 750° C. to about 850° C. and for a time period ranging from about 1 minute to about 5 minutes;
- and
- growing the exposed semiconductor substrate by a SEG process to form an epi-channel.
4 more elements
A method of forming an epi-channel in a semiconductor device comprising:
- turning a patterned pad oxide film and a nitride film on a surface of a semiconductor substrate thereby leaving an exposed first portion of the nitride film pad oxide film and substrate and a covered second portion of the substrate;
- etching the exposed portion fo the nitride film, pad oxide film and substrate to form a trench;
- applying a layer of insulating material on top of the trench;
- removing at least the nitride film from the second portion of the substrate and implanting ions at the second portion of the substrate to form a well;
- forming a screen oxide layer in the well and implanting ions in the well;
- removing the screen oxide film from the well by a H2 bake process;
- and
- growing the second portion of the semiconductor substrate by a SEG process to form an epi-channel.
5 more elements
Dependencies are inferred from the claim text.