Methods for forming conductive contact body for integrated circuits using dummy dielectric layer

A method for forming a conductive contact body of an integrated circuit device, comprising:

• forming a plurality of conductive lines including a line-type conductive pattern on a lower dielectric layer on an integrated circuit substrate, a spacer on sides of the conductive pattern, and a hard mask on tops of the conductive pattern;
• selectively etching the lower dielectric layer using the hard mask and the spacer as an etching mask to expose the substrate;
• forming a stopper layer that covers the hard mask, the spacer and the exposed substrate;
• forming a dummy dielectric layer in gaps between the conductive lines on the stopper layer;
• patterning the dummy dielectric layer to produce a dummy opening that selectively exposes some of the gaps between the conductive lines;
• forming an interdielectric layer pattern in the dummy opening that selectively exposes the dummy dielectric layer;
• selectively removing the dummy dielectric layer pattern using the interdielectric layer pattern as an etching mask to form a contact opening that exposes the stopper layer beneath the dummy dielectric layer pattern;
• removing the stopper layer that is exposed by the contact opening;
• forming a conductive layer in the contact opening and that is electrically connected to the substrate;
• and
• etching the conductive layer to separate the conductive layer into conductive contact bodies surrounded by the spacer and the interdielectric layer pattern.

A method of conductively contacting an integrated circuit including a plurality of spaced apart lines thereon, comprising:

• forming a dummy dielectric layer between first selected ones of the spaced apart lines;
• forming an interdielectric layer between second selected ones of the spaced apart lines that are different from the first selected ones of the lines, the interdielectric layer having lower etch rate than the dummy dielectric layer with respect to a predetermined etchant;
• etching the dummy dielectric layer with the predetermined etchant to remove at least some of the dummy dielectric layer between the first selected ones of the spaced apart lines;
• and
• forming a conductive layer between the first selected ones of the spaced apart lines from which at least some of the dummy dielectric layer has been removed, to electrically contact the integrated circuit between the first selected ones of the spaced apart lines.