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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYoshihisa Kato, Yasuhiro Shimada
Estimating the term…
A semiconductor memory includes a storing transistor for storing a data composed of any of an MFS transistor, an MFIS transistor and an MFMIS transistor, and a selecting transistor for selecting the storing transistor. A first well region of a first field effect transistor included in the storing transistor is isolated from a second well region of a second field effect transistor included in the selecting transistor. The semiconductor memory further includes a first voltage supply line for supplying a DC voltage to the first well region of the first field effect transistor, and a second voltage supply line independent of the first voltage supply line for supplying a DC voltage to the second well region of the second field effect transistor.
A semiconductor memory comprising:
A method for driving a semiconductor memory including a storing transistor for storing a data composed of any of an MFS transistor including a first field effect transistor having a gate electrode formed on a ferroelectric film, an MFIS transistor including a first field effect transistor having a gate electrode formed on a multi-layer film of a ferroelectric film and a dielectric film and an MFMIS transistor including a ferroelectric capacitor formed above a gate electrode of a first field effect transistor, and a selecting transistor for selecting said storing transistor composed of a second field effect transistor, said first field effect transistor having a first well region that is isolated from a second well region of said second field effect transistor, comprising:
Dependencies are inferred from the claim text.