Thin film capacitor and method of fabricating the same

A thin film capacitor comprising:

• (a) a semiconductor substrate;
• (b) a first interlayer insulating film formed on said semiconductor substrate;
• (c) a contact formed throughout said first interlayer insulating film such that said contact has an upper surface upwardly projecting;
• (d) a lower electrode formed on said first interlayer insulating film such that said lower electrode at least partially covers said upper surface of said contact therewith;
• (e) a capacity insulating film formed on said lower electrode;
• (f) a first upper electrode formed on said capacity insulating film;
• (g) a second interlayer insulating film covering said first interlayer insulating film, said lower electrode, said capacity insulating film and said first upper electrode therewith, said second interlayer insulating film being formed with an opening above said first upper electrode;
• and
• (h) a second upper electrode formed on said second interlayer insulating film such that said second upper electrode makes electrical contact with said first upper electrode through said opening of said second interlayer insulating film.

A thin film capacitor comprising:

• (a) a semiconductor substrate;
• (b) an interlayer insulating film formed on said semiconductor substrate;
• (c) a contact formed throughout said interlayer insulating film such that said contact has an upper surface upwardly projecting and an extended portion radially extending from said upper surface around said contact on said interlayer insulating film;
• (d) a lower electrode formed on said interlayer insulating film such that said lower electrode at least partially covers at least one of said upper surface and said extended portion of said contact therewith;
• (e) a capacity insulating film covering said lower electrode and said interlayer insulating film therewith;
• and
• (f) an upper electrode formed on said capacity insulating film.

A thin film capacitor comprising:

• (a) a semiconductor substrate;
• (b) a first interlayer insulating film formed on said semiconductor substrate;
• (c) a contact formed throughout said first interlayer insulating film such that said contact has an upper surface upwardly projecting and an extended portion radially extending from said upper surface around said contact on said first interlayer insulating film;
• (d) a lower electrode formed on said first interlayer insulating film such that said lower electrode at least partially covers at least one of said upper surface and said extended portion of said contact therewith;
• (e) a capacity insulating film formed on said lower electrode;
• (f) a first upper electrode formed on said capacity insulating film;
• (g) a second interlayer insulating film covering said first interlayer insulating film, said lower electrode, said capacity insulating film and said first upper electrode therewith, said second interlayer insulating film being formed with an opening above said first upper electrode;
• and
• (h) a second upper electrode formed on said second interlayer insulating film such that said second upper electrode makes electrical contact with said first upper electrode through said opening of said second interlayer insulating film.

A method of fabricating a thin film capacitor, comprising the steps of:

• (a) forming an interlayer insulating film on a semiconductor substrate;
• (b) forming a contact hole throughout said interlayer insulating film;
• (c) filling said contact hole with contact material;
• and
• (d) forming a lower electrode, a capacity insulating film and an upper electrode in this order on said interlayer insulating film,
• said step (c) including the step of depositing said contact material in said contact hole such that a resultant contact plug would have an upper surface upwardly projecting.

A method of fabricating a thin film capacitor, comprising the steps of:

• (a) forming an interlayer insulating film on a semiconductor substrate;
• (b) forming a contact hole throughout said interlayer insulating film;
• (c) filling said contact hole with contact material;
• and
• (d) forming a lower electrode, a capacity insulating film and an upper electrode in this order on said interlayer insulating film,
• said step (c) including the step of depositing said contact material in said contact hole such that a resultant contact plug would have an upper surface upwardly projecting and an extended portion radially extending from said upper surface around said contact hole on said interlayer insulating film.

A method of fabricating a thin film capacitor, comprising the steps of:

• (a) forming an interlayer insulating film on a semiconductor substrate;
• (b) forming a contact hole throughout said interlayer insulating film;
• (c) filling said contact hole with contact material;
• and
• (d) forming a lower electrode, a capacity insulating film and an upper electrode in this order on said interlayer insulating film,
• said step (c) including the steps of:
• (c1) depositing said contact material in said contact hole, said contact material having a thickness sufficient to fill said contact hole therewith,
• (c2) etching said contact material back to thereby fill said contact hole with said contact material;
• and
• (c3) growing said contact material such that a resultant contact plug would have an upper surface upwardly projecting.

A method of fabricating a thin film capacitor, comprising the steps of:

• (a) forming an interlayer insulating film on a semiconductor substrate;
• (b) forming a contact hole throughout said interlayer insulating film;
• (c) filling said contact hole with contact material;
• and
• (d) forming a lower electrode, a capacity insulating film and an upper electrode in this order on said interlayer insulating film,
• said step (c) including the steps of:
• (c1) depositing said contact material in said contact hole, said contact material having a thickness sufficient to fill said contact hole therewith,
• (c2) etching said contact material back to thereby fill said contact hole with said contact material;
• and
• (c3) growing said contact material such that a resultant contact plug would have an upper surface upwardly projecting and an extended portion radially extending from said upper surface around said contact hole on said interlayer insulating film.