Semiconductor device and its manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorTAKEO NAKAYAMA
Life of this patent
Estimating the term…
Abstract
Dummy patterns are formed in signal patterns of a first metal layer, an insulating film covering such patterns is flattened by CMP, and only dummy patterns are selectively etched by anisotropic etching through holes opened at specific intervals. Then the opened holes are filled with an insulating film, and cavities are formed. In the upper part of the cavity, a signal line of the second metal layer is formed. As a result, a semiconductor device is provided by the CMP flattening technology without being accompanied by increase of parasitic capacity between signal lines by metal dummy patterns or shorting due to dust and the like.
Claims20
A semiconductor device comprising:
- wiring patterns and dummy patterns formed on a first insulating film, and
- a second insulating film composed in a region on the first insulating film including the wiring patterns and the dummy patterns, with the surface being flattened,
- wherein the dummy patterns are selectively formed in cavities.
A semiconductor device comprising:
- wiring patterns and dummy patterns of a different material from the wiring patterns formed on a first insulating film, and
- a second insulating film composed in a region on the first insulting film including the wiring patterns and the dummy patterns, with the surface being flattened.
A method of manufacturing a semiconductor device comprising:
- a step of forming plural wiring patterns and plural dummy patterns on a first insulating film,
- a step of depositing a second insulating film in a region on the first insulating film including the plural wiring patterns and dummy patterns,
- a step of flattening the surface of the second insulating film by using the CMP technology,
- a step of selectively providing opening holes in the second insulating film on the plural dummy patterns,
- a step of etching the dummy patterns through the opening holes, and
- a step of depositing a third insulating film in a region on the second insulating film including the opening holes.
Dependencies are inferred from the claim text.