Semiconductor device, and method of manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsHiromichi Kobayashi, Takanori Sasaki
Life of this patent
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Abstract
There is described a semiconductor device which has an isolation region, the isolation region being polished by means of chemical-and-mechanical polishing, and which prevents occurrence of variations in a finished state of active regions even in a case where a large isolation area is present. An isolation region for separating active regions is formed on a semiconductor wafer. An annular dummy pattern is formed in an inactive region of greater than a predetermined size, so as to surround the isolation region. An isolation region is ensured between the active regions surrounding the inactive region and the dummy pattern.
Claims9
A semiconductor device including active regions, which regions are separated by isolation regions, the device comprising:
- a dummy pattern which is provided within an inactive region having greater size than a predetermined size and in an annular layout so as to surround an isolation region, wherein
- an isolation region having a width equal to or less than a predetermined width is ensured between the dummy pattern and the active regions surrounding the inactive region.
A method of manufacturing a semiconductor device including active regions, which regions are separated by isolation regions, the method comprising the steps of:
- forming in a semiconductor wafer trenches separating each active region and a dummy pattern;
- depositing insulating material for isolation purpose over the entire surface of the semiconductor wafer such that the inside of the trench is filled with the insulating material;
- and
- removing the insulating material deposited outside the trench, by means of chemical-and-mechanical polishing, to thereby form an isolation region in the trench, wherein
- the dummy pattern is provided in an annular layout within an inactive region having greater size than a predetermined size, and
- an isolation region having a width equal to or less than a predetermined width is formed between the dummy pattern and the active regions surrounding the inactive region.
Dependencies are inferred from the claim text.