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US 2002/0000607 A1Published application
Semiconductor power component with a reduced parasitic bipolar transistor
AssigneeInfineon Technologies AG
InventorFrank Pfirsch
Life of this patent
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Abstract
A semiconductor power component has a MOS structure in which the source region is formed of a material whose band gap is smaller than the band gap of the material of the channel region. This measure reduces the gain of a parasitic bipolar transistor.
Claims6
A semiconductor power component, comprising:
- a source region formed of a first material having a first band gap;
- a drain region;
- a channel region disposed between said source region and said drain region, said channel region being formed of a second material having a second band gap, said first band gap being smaller than said second band gap;
- and
- an insulated gate disposed at a given distance above said channel region.
2 more elements
A semiconductor configuration, comprising:
- an n-channel MOS field effect transistor including:
- a source region formed of a first material having a first band gap;
- a drain region;
- an n-channel region disposed between said source region and said drain region, said n-channel region being formed of a second material having a second band gap, said first band gap being smaller than said second band gap;
- and
- an insulated gate disposed at a given distance above said channel region.
3 more elements
A semiconductor configuration, comprising:
- an IGBT component including:
- a source region formed of a first material having a first band gap;
- a drain region;
- a channel region disposed between said source region and said drain region, said channel region being formed of a second material having a second band gap, said first band gap being smaller than said second band gap;
- and
- an insulated gate disposed at a given distance above said channel region.
3 more elements
Dependencies are inferred from the claim text.