V-shaped flash memory structure
OwnerRobin Leeinventor
Life of this patent
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Abstract
A flash memory having a V-shaped stack gate structure. The V-shaped stack gate is formed by implanting ions into a substrate to form a buried source line using a mask, and then forming a V-shaped trench that exposes the buried source line in the substrate. A V-shaped word line stack gate is next formed over the trench and the substrate next to the trench. A common drain terminal is formed in the substrate on each side of the V-shaped stack gate. The drain terminal is electrically connected to a bit line by forming a contact plug.
Claims13
A flash memory cell having a V-shaped gate above a substrate, comprising:
- a source terminal buried within the substrate;
- a tunnel oxide layer above the substrate having a V-shaped wedge section enclosed by the substrate and a wing section extended from the side near the upper comers of the V-shaped wedge, wherein the tip of the V-shaped wedge is in contact with the source terminal;
- a floating gate above the tunnel oxide layer conformal to the surface profile of the underlying tunnel oxide layer;
- a dielectric layer above the floating gate conformal to the surface profile of the underlying floating gate;
- a control gate above the dielectric layer;
- and
- a common drain terminal in the substrate adjacent to and on each side of the tunnel oxide layer.
A flash memory cell having a V-shaped gate above a substrate, comprising:
- a V-shaped stack gate having a V-shaped wedge section enclosed by the substrate and two wing sections above the substrate extending from an upper corner region on each side of the V-shaped wedge;
- a source terminal buried within the substrate, which source terminal also encloses a tip of the V-shaped wedge;
- and
- a common drain terminal in the substrate adjacent to and on each side of the V-shaped stack gate.
Dependencies are inferred from the claim text.