Microwave array transistor for low-noise and high-power applications

A method of forming a transistor array including a plurality of transistors, the method comprising the steps of:

• providing a substrate;
• providing a buried layer subcollector on the substrate;
• providing a plurality of collector pedestals on the buried layer subcollector;
• providing at least one base region on the collector pedestals, the base region including an intrinsic semiconductor base region overlying each collector pedestal, and a silicided base region common to a plurality of the transistors;
• providing an emitter region overlying each intrinsic base region;
• providing an emitter contact region overlying each emitter region;
• providing at least one collector reach through associated with each transistor;
• providing a collector reach through contact overlying each collector reach through;
• and
• providing at least one base contact overlying the silicided base region and associated with each transistor, such that a plurality of the base contacts are common to at least two transistors in the array.