Method for controlling arcing across thin dielectric film

A method for avoiding accidental arcing before, during and after, a sputter process for sputtering MR leads, comprising the steps of

• a) providing a wafer with an overlying shield layer, said wafer divided by an ABS line which defines a kerf side area and a slider side area;
• b) forming a first dielectric layer over said shield layer;
• c) forming a second dielectric layer over said first dielectric layer;
• d) patterning said second dielectric layer to form a MR window;
• e) forming a MR stripe over said first dielectric layer in said MR window;
• f) forming a resist layer over said second dielectric layer and said MR stripe;
• said resist layer having two lead openings that define two leads;
• said lead openings extend from said MR window in a first direction so that said MR window is the geometric center of said lead openings;
• g) placing said wafer in a sputtering tool having an electrode that generates an electric field in a second direction.

A method for avoiding accidental arcing, before, during and after, a sputter process for sputtering MR leads, comprising the steps of:

• a) providing a wafer with an overlying shield layer, said wafer having a head area;
• said head area divided by an ABS line which defines a kerf side area and a slider side area;
• b) forming a first dielectric layer over said shield layer;
• c) forming a second dielectric layer over said first dielectric layer;
• d) patterning said second dielectric layer to form a MR window and an first extraneous widow in an area where a lead opening will be formed;
• said MR window and said exposing said first dielectric layer;
• e) forming a MR stripe over said first dielectric layer in said MR window;
• f) forming a resist layer over said second dielectric layer and said MR stripe;
• said resist layer having first and second lead openings that define two leads;
• said lead openings extend from said window in a first direction so that said MR window is the symmetric axis of said lead openings and that one of said first or second lead opening connect said MR window and said first extraneous window being located at a tip of said first or second lead opening in said first direction;
• g) placing said wafer in a sputtering tool having an electrode that generates an electric field in a second direction;
• h) sputtering a lead layer over said resist layer and said second dielectric layer and said MR strip,
• i) removing said wafer from said sputtering tool.

A MR lead structure for avoiding accidental arcing before, during and after, a sputter process for sputtering MR leads, comprising of:

• a) a wafer with an overlying shield layer, said wafer having a head area;
• said head area divided by an ABS line which defines a kerf side area and a slider side area;
• b) a first dielectric layer over said shield layer;
• c) a second dielectric layer over said first dielectric layer;
• d) said second dielectric layer having a MR window overlying said ABS line and an first extraneous widow in an area where a lead opening will be formed;
• e) a MR stripe over said first dielectric layer in said MR window;
• f) a resist layer over said second dielectric layer and said MR stripe, said resist layer having first and second lead openings that define two leads;
• said lead openings extend from said MR window in a first direction so that said MR window is the geometric center of said lead openings;
• g) first and second leads on said second dielectric layer and said MR stripe and on said first dielectric layer in said MR window and said first extraneous window;
• said first and second leads extend from said MR window in a first direction so that said MR window is the geometric center of said first and second leads.